t4 - lds -0 301 -1, rev . 1 ( 6/ 25 /13 ) ?201 3 microsemi corporation page 1 of 6 1n5818ur-1, 1n5819ur-1, 1n6761ur- 1 and cdll variants available on commercial versions 1 amp schottky barrier rectifiers qualified per mil - prf - 19500/ 586 qualified levels * : jan, jantx, jantxv and jans description this 1 amp schottky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1n5819 ur - 1 and 1n6761 ur - 1 for high - reliability applications . this small diode is hermetically sealed and bonded into a do - 213ab melf glass pack age. do -2 13 ab (melf, ll41) package also available in : do - 41 package ( axial - leaded ) 1n5818 - 1, 1n 5819 -1, 1n6759 - 1 C 1n6761 -1 and dsb variants impo rtant: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n 581 8 , 1n5819 and 1n67 61 numbers. ? hermetically sealed do - 41 glass package. ? metallurgically bonded. ? * 1n5 819 ur - 1 and 1n6761 ur - 1 only are available in jan, jantx, jantxv and jans qualifications per mil - prf - 19500/586. (s ee part nomenclature for all available options.) ? rohs compliant versions available (commercial grade onl y) . applications / benefits ? small size for high density mounting using flexible thru - hole leads (see package illustration). ? low reverse (leakage) currents. ? non - sensitive to esd per mil - std - 750 t est m ethod 1020 (human body model) . ? inherently radiation h ard as described in microsemi micronote 050 . maximum ratings @ t a = +25 oc unless otherwise specified msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: + 353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit storage temperature t stg - 65 to +150 oc junction temperature 1n5819 ur -1 1n6761 ur -1 t j - 65 to +125 - 65 to +150 oc thermal resistance, junction - to - lead r ? jec 40 oc /w thermal resistance, junction - to - ambient r ? ja 220 oc /w average rectified output current @ t a = 55 oc on pcb board i o 1.0 a surge peak forward current i fsm 25 a solder temperature @ 10 s 260 o c note: 1. t ec = 55 oc for the 1n5819ur - 1 and t ec = 37 oc for the 1n6761ur - 1. downloaded from: http:///
t4 - lds -0 301 -1, rev . 1 ( 6/ 25 /13 ) ?201 3 microsemi corporation page 2 of 6 1n5818ur-1, 1n5819ur-1, 1n6761ur- 1 and cdll variants mechanical and packaging ? case: hermetically sealed glass do -213ab melf (ll41) package. ? terminals: tin/lead or rohs compliant matte - tin finished copper clad steel available (commercial grade only). solderable per mil - std - 750, method 2026. ? marking: cathode band. ? polarity: diode to be operated with the banded end positive with respect to the opposite end for zener regulation . ? mounting surface selection: the axial coefficient of expansion (coe) of t his device is approximately +6ppm/c. the coe of the mounting surface system should be selected to provide a suitable match with t his device. ? tape & reel optional: standard per eia - 481 -1- a with 12 mm tape. consult factory for quantities. ? weight: approximately 0.05 grams. ? see p ackage d imensions on last page. part nomenclature 1n5818ur - 1, 1n5819 ur -1* and 1n6761 ur -1* : jan 1n5819 ur -1 (e3) reliability level jan = jan level * jantx = jantx level * jantxv = jantxv level * j ans = jans level * *(applicable only to 1n5819 ur - 1 and 1n6761 ur - 1 numbers) blank = commercial grade jedec type number (s ee electrical characteristic s t able ) rohs compliance e3 = rohs c ompliant (on commercial grade only) blank = non - rohs c ompliant metallurgically bonded melf surface mount cdll6759 C cdll6761 : cdll 6759 (e3) microsemi designation series number (s ee electrical characteristic s t able ) ro hs compliance e3 = rohs c ompliant blank = non - rohs c ompliant cdll 1a20 C cdll 1a100 : cdll 1a 20 (e3) microsemi designation 1 amp rating 20 volt working peak reverse voltage ( v rwm ) rohs compliance e3 = rohs c ompliant blank = non - rohs c omp liant downloaded from: http:///
t4 - lds -0 301 -1, rev . 1 ( 6/ 25 /13 ) ?201 3 microsemi corporation page 3 of 6 1n5818ur-1, 1n5819ur-1, 1n6761ur- 1 and cdll variants symbols & definitions symbol definition c t total capacitance: the total small signal capacitance between the diode terminals of a compl ete device. f frequency i fsm surge peak forward current: the forward current including all nonrepetitive transient currents but excluding all repetitive transients (ref jesd282-b) i r reverse current: the dc current flowing from the external circuit into the cathode terminal at the specified v oltage v r . i o average rectified output current: the o utput c urrent averaged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle. v (br) minimum breakdown voltage: the minimum voltage the device will exhibi t at a specified current. v f forward voltage: the positive anode - cathode voltage the device will exhibit at a specified i f current. v r reverse voltage: the dc voltage applied in the reverse direction below the breakdown region. v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating t emperature range excluding all transient voltages (ref jesd282 - b). also sometimes known as piv. * electrical characteristics @ t a = 25 c unless otherwise specified type num ber working peak reverse voltage (1) maximum forward voltage maximum reverse leakage current at rated voltage maximum capacitance @ v r = 5 volts f 1.0 mhz v rwm v f @ 0.1a v f @ 1.0 a i rm @ 25c i rm @ 100c c t volts volts volts ma ma pf 1n5818ur - 1* 30 0.36 0.60 0.10 5.0 0.9 ? 1n5819 ur -1* 45 0.34 0.49 0.05 5.0 70 cdll 6759 60 0.38 0.69 0.10 6.0 na cdll 6760 80 0.38 0.69 0.10 6.0 na ? 1n6761 ur -1* 1 00 0.38 0.69 0.10 12.0 70 cdll 1a20 20 0.36 0.60 0.10 5.0 0.9 cdll 1a30 30 0.36 0.60 0.10 5.0 0.9 cdll 1a40 40 0.36 0.60 0.10 5.0 0.9 cdll 1a50 50 0.36 0.60 0.10 5.0 0.9 cdll 1a60 60 0.38 0.69 0.10 12.0 na cdll 1a80 80 0.38 0.69 0.10 12.0 na cdll 1a100 100 0.38 0.69 0.10 12.0 na *part number may also be ordered as cdll5818 or cdll5819 or cdll6761 . ? also available with jan, jantx, jant x v, and jans military qualifications . downloaded from: http:///
t4 - lds -0 301 -1, rev . 1 ( 6/ 25 /13 ) ?201 3 microsemi corporation page 4 of 6 1n5818ur-1, 1n5819ur-1, 1n6761ur- 1 and cdll variants graphs t j , junction temperature (oc) figure 1 typical reverse leakage current at rated piv (pulsed) v f , forward voltage, instantaneous (volts) figure 2 typical forward voltage for 1n5819ur -1 i r , reverse current (ma) i f , forward current, instantaneous (amps) downloaded from: http:///
t4 - lds -0 301 -1, rev . 1 ( 6/ 25 /13 ) ?201 3 microsemi corporation page 5 of 6 1n5818ur-1, 1n5819ur-1, 1n6761ur- 1 and cdll variants graphs (continued) time (s) figure 3 thermal impedance for 1n5819ur - 1 and 1n6761ur - 1 (do - 213ab) theta ( oc /w ) downloaded from: http:///
t4 - lds -0 301 -1, rev . 1 ( 6/ 25 /13 ) ?201 3 microsemi corporation page 6 of 6 1n5818ur-1, 1n5819ur-1, 1n6761ur- 1 and cdll variants package dimensions sy mbol d ime n si ons i nc h m illime ters min max min max bd 0.094 0.105 2.39 2.67 bl 0.189 0.205 4.80 5.21 ect 0.01 6 0.022 0.41 0.56 s 0.001 min 0.03 min notes: 1 . dimen sio ns are in in ch es . m illim eters are gi ven for in for ma t io n onl y. 2. gap not controlled, shape of body and gap not controlled. 3. in ac co rd an ce wi th asme y 14 .5m, diame ters are eq uival en t to x s ym bo l og y. pad layout ltr i nch mm a 0.276 7.00 b 0.0 70 1.8 c 0.110 2.8 downloaded from: http:///
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